DocumentCode
1080481
Title
Modular FET model with distributed source configuration for single and double side source grounded MESFET
Author
Baumann, G. ; Hierl, R.
Author_Institution
SEL Alcatel, Pforzheim, Germany
Volume
27
Issue
13
fYear
1991
fDate
6/20/1991 12:00:00 AM
Firstpage
1128
Lastpage
1129
Abstract
A new approach for accurately modelling MESFETs and HEMTs up to the high millimetre-wave range is described. The use of a distributed source configuration allows the characterisation of both single side grounded (SSG) and double side grounded (DSG) FETs in the common source and also in the reverse channel circuit configuration. The model has been verified up to 40 GHz with excellent results. To the authors´ knowledge the effect of SSG has not been examined yet by any commercial CAD tool.
Keywords
S-parameters; Schottky gate field effect transistors; field effect transistors; high electron mobility transistors; semiconductor device models; solid-state microwave devices; 40 GHz; EHF; HEMTs; MESFET; MM-wave devices; common source; distributed source configuration; double side grounded; millimetre-wave range; modular FET model; reverse channel circuit configuration; single side grounded;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910704
Filename
132706
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