Title :
Nondegenerate optical Kerr effect in semiconductors
Author :
Sheik-Bahae, Mansoor ; Wang, J. ; Van Stryland, E.W.
Author_Institution :
Center for Res. in Electro-Optics & Lasers, Univ. of Central Florida, Orlando, FL, USA
fDate :
2/1/1994 12:00:00 AM
Abstract :
We calculate the nondegenerate bound electronic nonlinear refractive index n2(ω1;ω2) (i.e., an index change at frequency ω1 due to the presence of a beam at frequency ω2) in semiconductors. We calculate this nonlinearity and its dispersion using a Kramers-Kronig transformation on the calculated nondegenerate nonlinear absorption spectrum due to two-photon absorption, electronic Raman and optical Stark effects. The calculated n2 values and their dispersion are compared to new experimental values for ZnSe and ZnS obtained using a 2-color Z-scan
Keywords :
II-VI semiconductors; Kramers-Kronig relations; Raman spectra of inorganic solids; Stark effect; optical Kerr effect; optical dispersion; refractive index; zinc compounds; 2-color Z-scan; Kramers-Kronig transformation; ZnS; ZnSe; dispersion; electronic Raman effects; index change; nondegenerate bound electronic nonlinear refractive index; nondegenerate nonlinear absorption spectrum; nondegenerate optical Kerr effect; optical Stark effects; semiconductors; two-photon absorption; Absorption; Dispersion; Frequency; Kerr effect; Nonlinear optics; Optical refraction; Optical variables control; Refractive index; Stark effect; Zinc compounds;
Journal_Title :
Quantum Electronics, IEEE Journal of
