• DocumentCode
    1080572
  • Title

    Observation of ballistic transport in hot-electron vertical FET spectrometer using ultrathin planar-doped barrier launcher

  • Author

    Daniels-Race, T. ; Yamasaki, Kazuhiko ; Schaff, W.J. ; Eastman, L.F.

  • Author_Institution
    Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
  • Volume
    27
  • Issue
    13
  • fYear
    1991
  • fDate
    6/20/1991 12:00:00 AM
  • Firstpage
    1144
  • Lastpage
    1145
  • Abstract
    Experimental evidence of ballistic transport by hot electron injection into a GaAs vertical FET channel using an ultra-thin planar-doped barrier has been obtained for the first time. The spectroscopy exhibited a narrow energy spread of less than 50 meV with an estimated 10% ballistic electrons.
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; hot carriers; semiconductor epitaxial layers; spectroscopy; GaAs vertical FET channel; GaAs-AlGaAs-InGaAs; ballistic transport; graded heterojunction analyser; hot electron injection; ultrathin planar-doped barrier launcher; vertical FET spectrometer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910713
  • Filename
    132715
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1080572