Title :
Millimetre wave performance of carbon-doped-base AlGaAs/GaAs HBTs
Author :
Yang, L.W. ; Wright, P.D. ; Ko, S.K. ; Kaleta, A.
Author_Institution :
Ford Microelectronics Inc., Colorado Springs, CO, USA
fDate :
6/20/1991 12:00:00 AM
Abstract :
AlGaAs/GaAs HBTs with fT of 52 GHz and fmax of 85 GHz have been obtained using a heavily-carbon-doped base layer. The HBT epitaxial layers were prepared by low-pressure MOVPE using carbon tetrachloride as the carbon source. To the author´s knowledge, this work reports the first carbon-doped AlGaAs/GaAs HBTs with fT and fmax greater than 50 GHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 52 to 85 GHz; AlGaAs-GaAs:C; C doped base; EHF; HBT epitaxial layers; MM-wave device; carbon tetrachloride; low-pressure MOVPE; millimetre wave operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910714
