Title :
High performance W-band InAlAs-InGaAs-InP HEMTs
Author :
Streit, D.C. ; Tan, K.L. ; Dia, R.M. ; Han, A.C. ; Liu, P.H. ; Yen, H.C. ; Chow, P.D.
Author_Institution :
TRW Electron. & Technol. Div., Redondo Beach, CA, USA
fDate :
6/20/1991 12:00:00 AM
Abstract :
0.15 mu m T-gate lattice-matched In0.52Al0.48As-In0.53Ga0.47As-InP HEMTs with a device minimum noise figure of 1.7 dB with 7.7 dB associated gain at 93 GHz have been fabricated. A single-ended active mixer was fabricated using these devices, and a conversion gain of 2.4 dB was measured with 7.3 dB single-sideband noise figure at 94 GHz. This is the first reported active mixer conversion gain at W-band.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; mixers (circuits); solid-state microwave devices; 0.15 micron; 1.7 dB; 2.4 dB; 7.3 dB; 7.7 dB; 93 to 94 GHz; EHF; HEMTs; In 0.52Al 0.48As-In 0.53Ga 0.47As-InP; MM-wave device; MMIC application; T-gate; W-band; conversion gain; lattice-matched; millimetre wave operation; minimum noise figure; single-ended active mixer; single-sideband noise figure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910716
