Title :
Correlation between linewidth rebroadening and low-frequency RIN enhancement in semiconductor lasers
Author :
Gray, G.R. ; Agrawal, Govind P.
Author_Institution :
Inst. of Opt., Rochester Univ., NY, USA
fDate :
6/20/1991 12:00:00 AM
Abstract :
The observed correlation between the linewidth rebroadening and the low-frequency relative-intensity noise (RIN) enhancement at high operating power in nearly-singlemode semiconductor lasers is explained by using the two-mode rate equations which include both the self- and cross-saturation contributions to the nonlinear gain.
Keywords :
electron device noise; laser theory; semiconductor junction lasers; spectral line breadth; cross-saturation; high operating power; linewidth rebroadening; low-frequency RIN enhancement; nearly-singlemode; nonlinear gain; relative-intensity noise; self-saturation; semiconductor lasers; two-mode rate equations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910717
