DocumentCode
1080636
Title
Platinum silicide fusion bonding
Author
Ismail, Mohamad Safari ; Bower, R.W.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Davis, CA, USA
Volume
27
Issue
13
fYear
1991
fDate
6/20/1991 12:00:00 AM
Firstpage
1153
Lastpage
1155
Abstract
Silicide direct bonding has been accomplished between silicon PtSi coated wafers and both PtSi coated and uncoated silicon wafers. Successful bonding occurred when the PtSi surface was rendered hydrophilic by a hot aqua regia selective etching and cleaning process. The PtSi provides bondable, relatively low resistance paths which provide electrical interconnections between circuit elements on the bonded pair of wafers.
Keywords
integrated circuit technology; lead bonding; platinum compounds; semiconductor technology; surface treatment; 3D ICs; Si wafers; Si-PtSi; aligned wafer bonding; cleaning process; electrical interconnections; fusion bonding; hot aqua regia selective etching; hydrophilic surface;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910719
Filename
132721
Link To Document