DocumentCode :
1080636
Title :
Platinum silicide fusion bonding
Author :
Ismail, Mohamad Safari ; Bower, R.W.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Davis, CA, USA
Volume :
27
Issue :
13
fYear :
1991
fDate :
6/20/1991 12:00:00 AM
Firstpage :
1153
Lastpage :
1155
Abstract :
Silicide direct bonding has been accomplished between silicon PtSi coated wafers and both PtSi coated and uncoated silicon wafers. Successful bonding occurred when the PtSi surface was rendered hydrophilic by a hot aqua regia selective etching and cleaning process. The PtSi provides bondable, relatively low resistance paths which provide electrical interconnections between circuit elements on the bonded pair of wafers.
Keywords :
integrated circuit technology; lead bonding; platinum compounds; semiconductor technology; surface treatment; 3D ICs; Si wafers; Si-PtSi; aligned wafer bonding; cleaning process; electrical interconnections; fusion bonding; hot aqua regia selective etching; hydrophilic surface;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910719
Filename :
132721
Link To Document :
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