• DocumentCode
    1080640
  • Title

    The concept of generation and recombination lifetimes in semiconductors

  • Author

    Chroder, D.K.

  • Author_Institution
    Arizona State University, Tempe, AZ
  • Volume
    29
  • Issue
    8
  • fYear
    1982
  • fDate
    8/1/1982 12:00:00 AM
  • Firstpage
    1336
  • Lastpage
    1338
  • Abstract
    The purpose of this brief is to discuss the concept of generation and recombination lifetimes, a concept frequently confused in the literature. The regimes of device operation where they apply is discussed and it is shown experimentally for the first time that the two can be very different in magnitude.
  • Keywords
    Charge carrier density; Charge carrier processes; Gallium arsenide; Lifetime estimation; Measurement techniques; Optical computing; P-n junctions; Photonic band gap; Radiative recombination; Spontaneous emission;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20879
  • Filename
    1482376
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1080640