Title :
The concept of generation and recombination lifetimes in semiconductors
Author_Institution :
Arizona State University, Tempe, AZ
fDate :
8/1/1982 12:00:00 AM
Abstract :
The purpose of this brief is to discuss the concept of generation and recombination lifetimes, a concept frequently confused in the literature. The regimes of device operation where they apply is discussed and it is shown experimentally for the first time that the two can be very different in magnitude.
Keywords :
Charge carrier density; Charge carrier processes; Gallium arsenide; Lifetime estimation; Measurement techniques; Optical computing; P-n junctions; Photonic band gap; Radiative recombination; Spontaneous emission;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20879
