Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

Author

Johnson, D.W. ; Lee, Rinus T. P. ; Hill, R.J.W. ; Man Hoi Wong ; Bersuker, Gennadi ; Piner, E.L. ; Kirsch, P.D. ; Harris, H.R.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas A&M Univ., College Station, TX, USA

Volume

60

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

3197

Lastpage

3203

Abstract

We report on the investigation of the charge trapping characteristics of dielectric-gated AlGaN/GaN high electron mobility transistors (HEMTs) with atomic layer deposited HfO₂ (Tetrakis-(ethylmethylamino)hafnium and H₂O precursors). The impact of process development and tool contamination in an Au-free 200-mm silicon CMOS line is discussed. The interfacial GaO_xN_y layer is proposed to be the primary location of long time constant traps. We examine the impact of these trap states on threshold voltage engineering of the gate stack. Enhancement mode operation of HEMTs is demonstrated, and the stability of enhancement mode is discussed.

Keywords

CMOS integrated circuits; III-V semiconductors; MOSFET; aluminium compounds; atomic layer deposition; contamination; dielectric thin films; electron traps; elemental semiconductors; gallium compounds; high electron mobility transistors; silicon; AlGaN-GaN; Au-free technology; CMOS line; Si; atomic layer deposition; charge trap-ping characteristics; dielectric-gated HEMT; dielectric-gated high electron mobility transistors; enhancement mode stability; gate stack; size 200 mm; threshold voltage engineering; threshold voltage shift; time constant traps; trap states; Aluminum gallium nitride; Charge carrier processes; Gallium nitride; HEMTs; Hafnium compounds; Logic gates; MODFETs; Au-free; GaN on Si; gate dielectric; power semiconductor devices; semiconductor–insulator interfaces;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2278677

Filename

6588580