Title :
High performance W-band low-noise pseudomorphic InGaAs HEMT MMIC amplifiers
Author :
Tan, K.L. ; Wang, Huifang ; Streit, D.C. ; Liu, P.H. ; Bui, S. ; Liu, J.K. ; Lin, Tingyi S. ; Dow, G.S. ; Chow, P.D. ; Berenz, J.
Author_Institution :
TRW Electron. Technol. Div., Redondo Beach, CA, USA
fDate :
6/20/1991 12:00:00 AM
Abstract :
State of the art W-band low noise MMICs have been fabricated using pseudomorphic InGaAs HEMTs with a 0.1 mu m gate length. A two-stage LNA fabricated using this process has achieved a gain of 13.3 dB at 94 GHz and 17 dB at 89 GHz, with a noise figure of 5.5 dB at 94 GHz. These results are the best reported to date for any MMIC LNA fabricated on both GaAs and InP substrates at this frequency range.
Keywords :
III-V semiconductors; MMIC; electron device noise; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; linear integrated circuits; microwave amplifiers; 0.1 micron; 13.3 to 17 dB; 5.5 dB; 89 to 94 GHz; EHF; HEMT; InGaAs; MIMIC; MM-wave IC; MMIC amplifiers; W-band; low-noise; pseudomorphic device; submicron gate length; two-stage LNA;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910727
