DocumentCode
1080716
Title
High performance W-band low-noise pseudomorphic InGaAs HEMT MMIC amplifiers
Author
Tan, K.L. ; Wang, Huifang ; Streit, D.C. ; Liu, P.H. ; Bui, S. ; Liu, J.K. ; Lin, Tingyi S. ; Dow, G.S. ; Chow, P.D. ; Berenz, J.
Author_Institution
TRW Electron. Technol. Div., Redondo Beach, CA, USA
Volume
27
Issue
13
fYear
1991
fDate
6/20/1991 12:00:00 AM
Firstpage
1166
Lastpage
1167
Abstract
State of the art W-band low noise MMICs have been fabricated using pseudomorphic InGaAs HEMTs with a 0.1 mu m gate length. A two-stage LNA fabricated using this process has achieved a gain of 13.3 dB at 94 GHz and 17 dB at 89 GHz, with a noise figure of 5.5 dB at 94 GHz. These results are the best reported to date for any MMIC LNA fabricated on both GaAs and InP substrates at this frequency range.
Keywords
III-V semiconductors; MMIC; electron device noise; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; linear integrated circuits; microwave amplifiers; 0.1 micron; 13.3 to 17 dB; 5.5 dB; 89 to 94 GHz; EHF; HEMT; InGaAs; MIMIC; MM-wave IC; MMIC amplifiers; W-band; low-noise; pseudomorphic device; submicron gate length; two-stage LNA;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910727
Filename
132729
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