Title :
A planar InP/InGaAsP heterostructure avalanche photodiode
Author :
Shirai, Tatsunori ; Yamazaki, Susumu ; Kawata, Haruo ; Nakajima, Kazuo ; Kaneda, Takao
Author_Institution :
Fujitsu Laboratory Ltd., Nakahara, Japan
fDate :
9/1/1982 12:00:00 AM
Abstract :
A new guard-ring structure for InP/InGaAsP heterostructure avalanche photodiodes (APD´s) is presented. The guard ring consists of a linearly graded junction formed by beryllium ion implantation and two-step InP layers having different carrier concentrations (n-and n-layers grown on an InGaAsP layer). A planar InP/InGaAsP avalanche photodiode having this guard ring has a maximum avalanche gain of 110 at an initial photocurrent of 0.35 µA. The effectiveness of the guard ring is clearly discernible from the spot-scanned photoresponse of the diode.
Keywords :
Annealing; Avalanche photodiodes; Diodes; Implants; Indium phosphide; Ion implantation; Optical surface waves; P-n junctions; Photoconductivity; Zinc;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20889
