Low-temperature Zn- and Cd-diffusion profiles in InP and formation of guard ring in InP avalanche photodiodes

Author

Ando, Hiroaki ; Susa, Nobuhiko ; Kanbe, Hiroshi

Author_Institution

Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan

Volume

29

Issue

9

fYear

1982

fDate

9/1/1982 12:00:00 AM

Firstpage

1408

Lastpage

1413

Abstract

Zn and Cd diffusion in InP were studied in the wide temperature range of 350-580°C to realize a guard ring in InP avalanche photodiodes (APD´s). Hole-concentration profiles for Zn and Cd diffusions at various temperatures were found to be expressed by a unified empirical curve, which decreases exponentially with the distance from the surface, and abruptly decreases at the diffusion front. A graded junction can be formed by diffusion at temperatures lower than 500°C for the n-InP background carrier concentration of 1016cm-3, while an abrupt junction can be formed by higher temperature diffusion. Breakdown voltages for the graded-junction diodes formed by low-temperature diffusion were confirmed to be higher than those for the abrupt-junction diodes formed by the higher temperature diffusion. A guard ring formed by the low-temperature Cd diffusion enabled planar-type InP and InGaAs/InP APD´s to have uniform multiplication in the photosensitive area without any edge breakdown.

Keywords

Absorption; Avalanche photodiodes; Dark current; Detectors; Indium gallium arsenide; Indium phosphide; Optical surface waves; Semiconductor diodes; Temperature distribution; Zinc;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1982.20890

Filename

1482387