DocumentCode :
1080752
Title :
Field effect semiconductor lasers
Author :
An, Jyong Chi ; Cho, Yoshio ; Ohke, Shigeaki ; Matsuo, Yukito
Author_Institution :
Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan
Volume :
16
Issue :
12
fYear :
1980
fDate :
12/1/1980 12:00:00 AM
Firstpage :
1300
Lastpage :
1302
Abstract :
A new semiconductor laser, the field-effect semiconductor (FES) laser, in which the both sides of the active region are surrounded by the burying layers with the reverse-biased p-n junctions is proposed. The proposed FES laser is a 
-switching device based on the direct control of laser beam intensity by the internal loss modulation through the field effect. The structure design and the operating principles of the device are discussed. Numerical solution shows that a pulsewidth shorter than 30 ps can be obtained.
-switching device based on the direct control of laser beam intensity by the internal loss modulation through the field effect. The structure design and the operating principles of the device are discussed. Numerical solution shows that a pulsewidth shorter than 30 ps can be obtained.Keywords :
Q-switched lasers; Semiconductor lasers; Diodes; Epitaxial growth; Laser mode locking; Laser modes; Optical pulse generation; Optical pulses; P-n junctions; Semiconductor lasers; Space vector pulse width modulation; Voltage;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1980.1070412
Filename :
1070412
Link To Document :
