Title :
Ultrashort laser: Lasing in MBE GaAs layer with perpendicular-to-film optical excitation and emission
Author :
Passner, A. ; Gibbs, H.M. ; Gossard, A.C. ; McCall, S.L. ; Venkatesan, T.N.C. ; Wiegmann, W.
Author_Institution :
Bell Labs., Murray Hill, NJ, USA
fDate :
12/1/1980 12:00:00 AM
Abstract :
Lasing was observed in a 4.5 μm thick GaAs MBE-grown heterostructure (0.2 μm Al0.42Ga0.58As, 4.1 μm GaAs, 0.21 μm AlGaAs). The laser was driven by pulses from a mode-locked Ar laser (514.5 nm) with a maximum of 20 W peak power in 100 ps long pulses focused to 25 μm. The lasing occured along the pump axis within a cavity defined by the coated AlGaAs surfaces.
Keywords :
Gallium materials/lasers; Gallium arsenide; Laser excitation; Laser mode locking; Optical bistability; Optical filters; Optical pulses; Optical pumping; Power lasers; Pump lasers; Stimulated emission;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1980.1070413
