DocumentCode :
1080774
Title :
Linear k term valence subband mixing and its effect on electroabsorption of tensile-strained GaAs/AlGaAs quantum wells
Author :
Xue, Deng-ping ; Bardyszewski, Witold ; Yevick, David
Author_Institution :
Dept. of Electr. Eng., Queen´´s Univ., Kingston, Ont., Canada
Volume :
30
Issue :
2
fYear :
1994
fDate :
2/1/1994 12:00:00 AM
Firstpage :
446
Lastpage :
451
Abstract :
We have examined the contribution of a linear k term in the Luttinger Hamiltonian to electroabsorption of strained quantum wells. We have solved the 4×4 effective mass equation for the two lowest valence subbands and an appropriate set of differential equations for excitons. For bound excitons, our results indicate that the hh1→c1 transition is not forbidden for z-polarized electromagnetic waves, that the absorption spectrum can be independent of polarization, and that the hh1 and lh1 absorption edges, contrary to recent suggestion, cannot merge
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; semiconductor quantum wells; valence bands; 4×4 effective mass equation; GaAs-AlGaAs; Luttinger Hamiltonian; absorption spectrum; bound excitons; differential equations; electroabsorption; hh1 absorption edges; hh1→c1 transition; lh1 absorption edges; linear k term valence subband mixing; tensile-strained GaAs/AlGaAs quantum wells; z-polarized electromagnetic waves; Differential equations; Effective mass; Eigenvalues and eigenfunctions; Electromagnetic scattering; Electromagnetic wave absorption; Electromagnetic wave polarization; Excitons; Gallium arsenide; Helium; Optoelectronic devices;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.283792
Filename :
283792
Link To Document :
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