Title :
A monolithic GaInAsP/InP photovoltaic power converter
Author :
Ng, Willie W. ; Nakano, Kenichi ; Liu, Y.Z. ; Dapkus, P.Daniel
Author_Institution :
Rockwell International Microelectronics Research and Development Center, Thousand Oaks, CA, USA
fDate :
9/1/1982 12:00:00 AM
Abstract :
A monolithic GaInAsP/InP photovoltaic power converter (cell diam = 2.5 mm), optimized for power conversion at 1.06 µm, was successfuly fabricated by mesa isolation on semi-insulating InP substrates. An estimation of the quantum efficiency achievable with double heterostructures grown by liquid-phase epitaxy is given. Open-circuit voltages of 7.6 V, power-conversion efficiencies of 30 percent, and fill factors as high as 75 percent, were obtained from a device consisting of twelve cell segments connected in series.
Keywords :
Epitaxial growth; Fiber lasers; Indium phosphide; Optical fibers; Photonic band gap; Photovoltaic systems; Power conversion; Solar power generation; Stimulated emission; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20895
