• DocumentCode
    1080800
  • Title

    Optimized design and fabrication of high-speed and high-radiance InGaAsP/InP DH LED in the 1-µm wavelength region

  • Author

    Wada, Osamu ; Hamaguchi, Hisashi ; Nishitani, Yorimitsu ; Sakurai, Teruo

  • Author_Institution
    Fujitsu Laboratories Ltd., Kawasaki, Japan
  • Volume
    29
  • Issue
    9
  • fYear
    1982
  • fDate
    9/1/1982 12:00:00 AM
  • Firstpage
    1454
  • Lastpage
    1462
  • Abstract
    Design and fabrication of an InGaAsP/InP double-heterostructure (DH) light-emitting diode (LED) with a monolithic lens, Which exhibits high-speed and high-radiance performance, have been presented. Dependences of operating characteristics such as the coupled power, the current-light linearity and the cutoff frequency on the LED, and the fiber structural parameters, have been analyzed, modeled, and applied to complete an optimal design. It has been found that a high magnification lens allows one to maximize both the coupled output power and the response speed. LED´S coupled to 50-µm core 0.2-NA graded-index fiber have been fabricated at the wavelengths of 1.15, 1.3, and 1.5 µm. A significant improvement has been achieved particularly in the cutoff frequency, and the maximum value of 120 MHz at the current of 100 mA has been realized at 1.3-µm wavelength without reduction of the coupled power (35 µW). High-speed and high-power performances of these diodes are promising for their application to high bit-rate transmission systems.
  • Keywords
    Cutoff frequency; DH-HEMTs; Design optimization; Fabrication; Indium phosphide; Lenses; Light emitting diodes; Linearity; Optical design; Structural engineering;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20896
  • Filename
    1482393