Title :
Piezoelectric fields in strained (In,Ga)As/GaAs multiple-quantum-well structures grown on vicinal (110) GaAs
Author :
Sun, Decai ; Towe, Elias
Author_Institution :
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
fDate :
2/1/1994 12:00:00 AM
Abstract :
A study of piezoelectric-induced effects in strained (In,Ga)As/GaAs multiple quantum well structures grown on [110]-oriented GaAs substrates tilted by 6° toward the (111)B surface is presented. The elastic strain in the (In,Ga)As layers generates a large longitudinal electric field and a transverse polarization. A blue-shift in the photoluminescent emission peak with increasing excitation intensity is observed. This shift Is believed to be a manifestation of the internal strain-induced electric field. As the density of photogenerated electron-hole pairs is increased-corresponding to increasing excitation intensity-the magnitude of the electric field is reduced and the emission peak is blue-shifted
Keywords :
electric fields; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; piezoelectric semiconductors; piezoelectricity; semiconductor quantum wells; (111)B surface; (In,Ga)As layers; InGaAs-GaAs; [110]-oriented GaAs substrates; blue-shift; elastic strain; electric field magnitude reduction; emission peak; increasing excitation intensity; internal strain-induced electric field; large longitudinal electric field; photogenerated electron-hole pair density; photoluminescent emission peak; piezoelectric fields; piezoelectric-induced effects; strained (In,Ga)As/GaAs multiple-quantum-well structures; transverse polarization; vicinal (110) GaAs; Capacitive sensors; Carrier confinement; Epitaxial growth; Gallium arsenide; Piezoelectric polarization; Quantum well devices; Stress; Substrates; Sun; Tensile strain;
Journal_Title :
Quantum Electronics, IEEE Journal of
