DocumentCode
1080829
Title
Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers
Author
Thiis, P.J.A. ; Tiemeijer, Luuk F. ; Binsma, J.J.M. ; Van Dongen, Teus
Author_Institution
Philips Optoelectronics Centre, Eindhoven, Netherlands
Volume
30
Issue
2
fYear
1994
fDate
2/1/1994 12:00:00 AM
Firstpage
477
Lastpage
499
Abstract
The progress in long-wavelength compressively and tensile-strained InGaAs(P) quantum-well semiconductor lasers and amplifiers is reviewed. By the application of grown-in strain, the device performance is considerably improved such that conventional bulk and unstrained quantum-well active-layer devices are outperformed, while a high reliability is maintained
Keywords
III-V semiconductors; gallium arsenide; indium compounds; reliability; semiconductor lasers; InGaAs(P) quantum-well semiconductor lasers; InGaAsP; compressively strained; device performance; grown-in strain; high reliability; long-wavelength; review; semiconductor laser amplifiers; strained-layer; tensile-strained; Capacitive sensors; Fiber lasers; Gallium arsenide; Laser theory; Maintenance; Optical materials; Photonic band gap; Quantum well devices; Quantum well lasers; Quantum wells; Semiconductor lasers; Semiconductor optical amplifiers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.283797
Filename
283797
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