DocumentCode :
1080834
Title :
Stimulated spin-flip scattering, photoluminescence, and magnetoabsorption in n-type Hg0.89 Mn0.11 Te
Author :
Geyer, F.F. ; Fan, H.Y.
Author_Institution :
Eastman Kodak Research Labs., Rochester, NY, USA
Volume :
16
Issue :
12
fYear :
1980
fDate :
12/1/1980 12:00:00 AM
Firstpage :
1365
Lastpage :
1371
Abstract :
Stimulated spin-flip scattering has been observed for the first time in Hg0.89 Mn0.11 Te. The Lande 
-factor and effective mass of the conduction electrons in this material have been determined from scattering and magnetoabsorption measurements. The data yield a scattering cross section which agrees reasonably with the theoretical expectation. By the use of different laser frequencies, the effect of resonance enhancement of the cross section was observed. The stimulated scattering was observed with polarizations additional to those allowed by the selecton rules of a single-particle process. Photoluminescence was also observed which appeared to be stimulated. It was found to involve localized states 12-15 meV above the valence band.
-factor and effective mass of the conduction electrons in this material have been determined from scattering and magnetoabsorption measurements. The data yield a scattering cross section which agrees reasonably with the theoretical expectation. By the use of different laser frequencies, the effect of resonance enhancement of the cross section was observed. The stimulated scattering was observed with polarizations additional to those allowed by the selecton rules of a single-particle process. Photoluminescence was also observed which appeared to be stimulated. It was found to involve localized states 12-15 meV above the valence band.Keywords :
Cyclotron resonance; Manganese materials/devices; Mercury materials/devices; Optical scattering; Raman lasers; Conducting materials; Effective mass; Electrons; Magnetic materials; Magnetic resonance; Mercury (metals); Optical materials; Photoluminescence; Scattering; Tellurium;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1980.1070418
Filename :
1070418
Link To Document :
