Abstract :
New information concerning the readout of charge-injection device (CID) arrays, used for optical detection, is obtained from the well known Kirchhoff voltage equation for surface potential. Emphasis is placed on those readout modes involving read on injection which have been found useful with infrared-sensitive CID´s. The theory obtained relates surface potential, depletion depth, mobile charge in the inversion well, and voltage on the floating gate before, during, and after injection. Previous work which obtained some properties of individual gates with filled or empty inversion wells is extended to pairs of coupled gates and partially filled potential wells. Coupled gates operating in ideal mode and in charge-sharing mode, with either column injection or row injection are included. Additional properties derived are high-frequency differential capacitance, output voltage, readout efficiency and its differential analog, transient response, charge-sharing efficiency, and differential charge-sharing efficiency. Numerical computations are given for representative CID pixels on InSb.
