Linewidth enhancement factor in InGaAsP/lnP modulation-doped strained multiple-quantum-well lasers

Author

Kano, Fumiyoshi ; Yamanaka, Takayuki ; Yamamoto, Norio ; Mawatari, Hiroyasu ; Tohmori, Yuichi ; Yoshikuni, Yuzo

Author_Institution

NTT Opto-Electron. Labs., Ibaraki, Japan

Volume

30

Issue

2

fYear

1994

fDate

2/1/1994 12:00:00 AM

Firstpage

533

Lastpage

537

Abstract

Reduction of the linewidth enhancement factor α is studied in InP-based strained multiple-quantum-well (MQW) lasers. Theoretical analysis shows that the α-parameter is greatly reduced in modulation-doped strained MQW lasers and may be zero while keeping positive gain. The experimental evaluation exhibits a very small α-parameter of around 1 in InGaAsP/InP modulation-doped strained MQW lasers. As a result of the small α-parameter, the linewidth-power product is effectively reduced in 1.5-μm DFB lasers with the modulation-doped strained MQW structure. A narrow spectral linewidth around 100 kHz was also obtained reproducibly in 1.5-μm modulation-doped strained MQW DFB lasers

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor lasers; spectral line breadth; α-parameter; 1.5 micron; DFB lasers; InGaAsP-InP; InGaAsP/lnP modulation-doped strained multiple-quantum-well lasers; gain; linewidth enhancement factor; linewidth-power product; spectral linewidth; Dispersion; Epitaxial layers; Fluctuations; Indium phosphide; Laser theory; Laser transitions; Quantum well devices; Refractive index; Region 9; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.283801

Filename

283801