Title :
Effects of well number in 1.3-μm GaInAsP/InP GRIN-SCH strained-layer quantum-well lasers
Author :
Namegaya, T. ; Matsumoto, N. ; Yamanaka, N. ; Iwai, N. ; Nakayama, H. ; Kasukawa, A.
Author_Institution :
R&D Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
2/1/1994 12:00:00 AM
Abstract :
Effects of well number in 1.3-μm GaInAsP/InP GRIN-SCH compressively strained-layer quantum-well lasers were investigated from the viewpoint of the crystal quality of the strained-layer quantum wells and low threshold current operation at high temperature. As a result, we find that the optimum well number that gives the minimum threshold current increases with operating temperature and it was limited to the degradation of crystal quality of the quantum wells due to the critical thickness. A very high CW operating temperature of 170°C was obtained. A very high output power of over 300 mW was also achieved
Keywords :
III-V semiconductors; gallium arsenide; gradient index optics; indium compounds; semiconductor lasers; 1.3 micron; 170 C; 300 mW; CW operating temperature; GaInAsP-InP; GaInAsP/InP GRIN-SCH strained-layer quantum-well lasers; critical thickness; crystal quality; high temperature; output power; threshold current; well number; Capacitive sensors; Charge carrier density; Degradation; Indium phosphide; Optical saturation; Optical waveguides; Power generation; Quantum well devices; Quantum well lasers; Temperature; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
