• DocumentCode
    1081041
  • Title

    Fabrication and lasing properties of mesa substrate buried heterostructure GaInAsP/InP lasers at 1.3 µm wavelength

  • Author

    Kishino, Katsumi ; Suematsu, Yasuharu ; Takahashi, Yoshio ; Tanbun-Ek, Tawee ; Itaya, Yoshio ; Tanbun-Ek, T. ; Itaya, Y.

  • Author_Institution
    Tokyo Institute of Technology, Meguro-ku, Tokyo, Japan
  • Volume
    16
  • Issue
    2
  • fYear
    1980
  • fDate
    2/1/1980 12:00:00 AM
  • Firstpage
    160
  • Lastpage
    164
  • Abstract
    Fabrication and lasing properties of novel GaInAsP/InP injection lasers at 1.3 μm, with buried heterostructure grown on mesa substrate and fabricated by single-step crystal growth are reported. In this mesa substrate buried heterostructure (MSB) laser, the GaInAsP active layer was grown separately on the top of a mesa structure formed along the surface of a
  • Keywords
    Fiber lasers; Gallium arsenide; Indium phosphide; Laser modes; Laser stability; Laser theory; Optical device fabrication; Shape; Substrates; Waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1980.1070436
  • Filename
    1070436
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1081041