Transient analysis of two semiconductor devices under circuit-loaded operation conditions

A new method of numerical analysis for semiconductor devices is described. The analysis is carried out by solving a set of fundamental equations which govern the device characteristics and the circuit equation which indicates the circuit condition, simultaneously. Here, instead of Poisson\´s equation used as one of the fundamental equations in most reported analyses, a "current equation" is used, which represents the device current consisting of conduction current and displacement current. Current equation can be directly substituted into the circuit equation, so the solution obtained from this analysis has self-consistency between device characteristics and circuit condition, Furthermore, the time variations for I-V characteristics, carrier concentration distribution, and electric field distribution for an individual device can be obtained. As a calculation example, the transient characteristics of two diodes with reverse biased condition are calculated. Avalanche oscillation is found for both diodes with opposite phase after avalanche breakdown.