Title :
High Gain × Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes
Author :
Rouvié, Anne ; Carpentier, Daniéle ; Lagay, Nadine ; Décobert, Jean ; Pommereau, Frédéric ; Achouche, Mohand
Author_Institution :
Alcatel-Thales III-V Lab., Marcoussis
fDate :
3/15/2008 12:00:00 AM
Abstract :
This letter demonstrates a planar junction GalnAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical vapor deposition SiNx antireflection coating. The combined properties of very low dark current (I dark(M = 0) = 17 nA), low excess noise factor (f(M = 10) = 3.5), and high gain x bandwidth product over 140 GHz were simultaneously achieved with a high primary responsivity of 0.95 A/W at 1.55 mum.
Keywords :
CVD coatings; III-V semiconductors; aluminium compounds; antireflection coatings; avalanche photodiodes; dark conductivity; gallium arsenide; gallium compounds; indium compounds; semiconductor junctions; GaInAs-AlInAs; antireflection coating; back-side illumination; chemical vapor deposition; dark current; frequency 140 GHz; noise factor; planar junction avalanche photodiode; Absorption; Avalanche photodiodes; Bandwidth; Dark current; Dry etching; Indium phosphide; Optical noise; Optical receivers; Silicon compounds; Substrates; AlInAs; avalanche photodiodes (APDs); dark current; excess noise factor; gain-bandwidth product; multiplication;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.918229
