Title :
Bipolar area-image sensor
Author :
Ogino, Toshio ; Sakaue, Masahiro ; Tamama, Teruo ; Mizushima, Yoshihiko
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
fDate :
10/1/1982 12:00:00 AM
Abstract :
A new area-image sensor, utilizing shift registers in a bipolar transistor scheme, is reported. The preliminary device consists of 64 × 64 pixels with p-n junction photodiode and row- and column-PCD scanners. Experimentally found advantages were simple process, high fabrication yield, low output impedance, and high output power. A possibility for making a bipolar area-image sensor is verified.
Keywords :
Circuits; Electric resistance; Fabrication; Impedance; P-n junctions; Photodiodes; Power generation; Sensor phenomena and characterization; Shift registers; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20929
