DocumentCode
1081190
Title
Bipolar area-image sensor
Author
Ogino, Toshio ; Sakaue, Masahiro ; Tamama, Teruo ; Mizushima, Yoshihiko
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
Volume
29
Issue
10
fYear
1982
fDate
10/1/1982 12:00:00 AM
Firstpage
1637
Lastpage
1639
Abstract
A new area-image sensor, utilizing shift registers in a bipolar transistor scheme, is reported. The preliminary device consists of 64 × 64 pixels with p-n junction photodiode and row- and column-PCD scanners. Experimentally found advantages were simple process, high fabrication yield, low output impedance, and high output power. A possibility for making a bipolar area-image sensor is verified.
Keywords
Circuits; Electric resistance; Fabrication; Impedance; P-n junctions; Photodiodes; Power generation; Sensor phenomena and characterization; Shift registers; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20929
Filename
1482426
Link To Document