DocumentCode
1081212
Title
I-V characteristics of MESFET´s with nonuniform carrier distribution
Author
Weng, Tung H.
Author_Institution
Oakland University, Rochester, MI
Volume
29
Issue
10
fYear
1982
fDate
10/1/1982 12:00:00 AM
Firstpage
1641
Lastpage
1643
Abstract
The expression for 
characteristics of a metal-semiconductor field-effect transistor with nonuniform carrier distribution in the channel is presented along with the calculated values of a typical device structure. This expression was obtained based on the derived expression for the depletion width versus reverse bias voltage of a metal-semiconductor junction.
characteristics of a metal-semiconductor field-effect transistor with nonuniform carrier distribution in the channel is presented along with the calculated values of a typical device structure. This expression was obtained based on the derived expression for the depletion width versus reverse bias voltage of a metal-semiconductor junction.Keywords
Conductivity; Conductors; Doping profiles; Electrons; FETs; Gaussian channels; Ion implantation; MESFETs; MOSFETs; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20931
Filename
1482428
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