DocumentCode :
1081212
Title :
I-V characteristics of MESFET´s with nonuniform carrier distribution
Author :
Weng, Tung H.
Author_Institution :
Oakland University, Rochester, MI
Volume :
29
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1641
Lastpage :
1643
Abstract :
The expression for 
characteristics of a metal-semiconductor field-effect transistor with nonuniform carrier distribution in the channel is presented along with the calculated values of a typical device structure. This expression was obtained based on the derived expression for the depletion width versus reverse bias voltage of a metal-semiconductor junction.
characteristics of a metal-semiconductor field-effect transistor with nonuniform carrier distribution in the channel is presented along with the calculated values of a typical device structure. This expression was obtained based on the derived expression for the depletion width versus reverse bias voltage of a metal-semiconductor junction.Keywords :
Conductivity; Conductors; Doping profiles; Electrons; FETs; Gaussian channels; Ion implantation; MESFETs; MOSFETs; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20931
Filename :
1482428
Link To Document :
