Title :
14 GHz low-power highly sensitive static frequency divider using quantum well AlGaAs/GaAs/AlGaAs FET technology
Author :
Wennekers, P. ; Huelsmann, A. ; Kaufel, G. ; Koehler, Katrina ; Raynor, B. ; Schneider, Jurgen
Author_Institution :
Fraunhofer-Inst. for Appl. Solid State Phys., Freiburg, Germany
fDate :
6/20/1991 12:00:00 AM
Abstract :
A 14 GHz static frequency divider has been fabricated using an enhancement/depletion 0.3 mu m recessed-gate AlGaAs/GaAs/AlGaAs quantum well FET process. The divider has a power dissipation of 35 mW at a supply voltage of 1.80 V. The minimum input power for dividing operation is 8.3 dBm at a maximum input frequency of 14.2 GHz, which is lowered to -6.2 dBm, when operating at 12.0 GHz.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; flip-flops; frequency dividers; gallium arsenide; integrated logic circuits; semiconductor quantum wells; 0.3 micron; 1.8 V; 12 to 14.2 GHz; 14 GHz; 35 mW; AlGaAs-GaAs-AlGaAs; FET technology; SHF; enhancement/depletion process; low-power; master-slave flipflop; power dissipation; quantum well; recessed-gate; static frequency divider; supply voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910732
