DocumentCode

1081268

Title

IIA-1 generalized scaling theory and its application to a 1/4 micron mosfet design

Author

Baccarani, G. ; Wordeman, M.R. ; Dennard, R.H.

Volume

29

Issue

10

fYear

1982

fDate

10/1/1982 12:00:00 AM

Firstpage

1660

Lastpage

1661

Keywords

Breakdown voltage; Contact resistance; Impurities; Laboratories; MOSFET circuits; Nitrogen; Shape; Substrates; Temperature dependence; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1982.20937

Filename

1482434