• DocumentCode
    1081366
  • Title

    IIB-3 new interdigitated pn junction device with novel capacitance-voltage characteristic and ultrahigh optical sensitivity

  • Author

    Capasso, Federico ; Logan, R.A. ; Tsang, W.T. ; Hayes, J.R.

  • Volume
    29
  • Issue
    10
  • fYear
    1982
  • fDate
    10/1/1982 12:00:00 AM
  • Firstpage
    1667
  • Lastpage
    1668
  • Keywords
    Capacitance; Capacitance-voltage characteristics; Charge coupled devices; Etching; Gallium arsenide; High speed optical techniques; Optical devices; Optical receivers; Optical sensors; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20947
  • Filename
    1482444