DocumentCode
1081366
Title
IIB-3 new interdigitated pn junction device with novel capacitance-voltage characteristic and ultrahigh optical sensitivity
Author
Capasso, Federico ; Logan, R.A. ; Tsang, W.T. ; Hayes, J.R.
Volume
29
Issue
10
fYear
1982
fDate
10/1/1982 12:00:00 AM
Firstpage
1667
Lastpage
1668
Keywords
Capacitance; Capacitance-voltage characteristics; Charge coupled devices; Etching; Gallium arsenide; High speed optical techniques; Optical devices; Optical receivers; Optical sensors; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20947
Filename
1482444
Link To Document