• DocumentCode
    1081393
  • Title

    Current-voltage characteristics of bend in mesoscopic wire

  • Author

    Thornton, Trevor J. ; Yamada, Shigeru ; Yamamoto, Manabu ; Aihara, Kazuyuki

  • Author_Institution
    NTT Basic Res. Labs., Tokyo, Japan
  • Volume
    27
  • Issue
    13
  • fYear
    1991
  • fDate
    6/20/1991 12:00:00 AM
  • Firstpage
    1177
  • Lastpage
    1178
  • Abstract
    The four terminal resistance of a bend in a mesoscopic wire changes sign with increasing temperature. This transition leads to a nonlinear I/V characteristic which can, under suitable bias conditions, be used to produce frequency doubling.
  • Keywords
    carrier mobility; negative resistance; quantum interference phenomena; semiconductor quantum wires; ballistic wire junction; bend resistance; bias conditions; crossed wire junction; four terminal resistance; frequency doubling; mesoscopic wire; nonlinear I/V characteristic; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910734
  • Filename
    132736
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1081393