DocumentCode
1081453
Title
GaAs split phase dynamic logic
Author
Law, Oscar M K ; Salama, C.A.T.
Author_Institution
Dept. of Electr. and Comput. Eng., Toronto Univ., Ont., Canada
Volume
29
Issue
5
fYear
1994
fDate
5/1/1994 12:00:00 AM
Firstpage
617
Lastpage
622
Abstract
A novel GaAs dynamic logic gate: split phase dynamic logic (SPDL) is presented in this paper. The logic gate, derived from CMOS domino circuits, uses a split phase inverter to increase output voltage swing and a self-biased transistor to compensate for leakage loss. Compared with current GaAs dynamic logic designs, it offers several distinct advantages including small propagation delay, large output swing, low power dissipation and high process tolerance. The logic gate can be made directly compatible with direct-coupled FET logic (DCFL) and buffered FET logic (BFL) allowing flexible design for a variety of high speed digital applications. Four-bit carry lookahead adders using SPDL were fabricated in a 1 μm non-self aligned GaAs MESFET technology and the critical delays were found to be of the order of 500 ps
Keywords
III-V semiconductors; adders; carry logic; field effect integrated circuits; gallium arsenide; integrated logic circuits; logic design; logic gates; 1 micron; 500 ps; DCFL compatibility; GaAs; SPDL; buffered FET logic compatibility; carry lookahead adders; domino circuits; high process tolerance; leakage loss compensation; logic gate; low power dissipation; nonself aligned GaAs MESFET technology; output swing; propagation delay; self-biased transistor; split phase dynamic logic; split phase inverter; Adders; CMOS logic circuits; FETs; Gallium arsenide; Logic design; Logic gates; Power dissipation; Propagation delay; Pulse inverters; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.284715
Filename
284715
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