• DocumentCode
    1081484
  • Title

    IIIA-5 low threshold, high efficiency Ga1-xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition

  • Author

    Burnham, R.D. ; Scifres, D.R. ; Streifer, W.

  • Volume
    29
  • Issue
    10
  • fYear
    1982
  • fDate
    10/1/1982 12:00:00 AM
  • Firstpage
    1674
  • Lastpage
    1674
  • Keywords
    Chemical lasers; Dielectric substrates; Epitaxial growth; Gallium arsenide; MOCVD; Monolithic integrated circuits; Optical devices; Pulsed laser deposition; Quantum well lasers; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20957
  • Filename
    1482454
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1081484