DocumentCode :
1081495
Title :
IIIA-6 GaAlAs/GaAs MOCVD selective epitaxy for monolithic optical device integration with comples GaAs IC´s
Author :
Kim, May E. ; Hong, Choong ; Kasemset, D. ; Coleman, J.J. ; Bernescut, R. ; Patel, N.B. ; Dapkus, P.D.
Volume :
29
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1674
Lastpage :
1675
Keywords :
Epitaxial growth; Etching; Gallium arsenide; Indium phosphide; MOCVD; Monolithic integrated circuits; Optical devices; Optical signal processing; Optical transmitters; Photonic integrated circuits;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20958
Filename :
1482455
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1081495
