Title :
IIIA-8 buried heterostructure GaInAsP/InP lasers fabricated using thermally transported InP
Author :
Liau, Z.L. ; Walpole, J.N.
Author_Institution :
Massachusetts Institute of Technology, Lexington, MA
fDate :
10/1/1982 12:00:00 AM
Keywords :
Chemical lasers; Chemical technology; Etching; Indium phosphide; Integrated optics; Laboratories; Laser modes; Optical control; Optical device fabrication; Threshold current;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20959
