Title :
Long-lived high-power GaAlAs DH laser diodes
Author :
Imai, H. ; Morimoto, M. ; Hori, K. ; Takusagawa, M. ; Saito, H.
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
fDate :
3/1/1980 12:00:00 AM
Abstract :
Aging test at high-power operation has been done by using facet coated GaAlAs DH laser diodes. Median lifetimes at 70°C are 9000 h for 10 mW/facet operation, 4500 h for 15 mW/facet operation, and 2000 h for 20 mW/facet operation. It is found that the median lifetime decreases with the inverse square of the optical power.
Keywords :
Gallium materials/lasers; Semiconductor device reliability; Aging; Atmosphere; Coatings; DH-HEMTs; Degradation; Diode lasers; Optical films; Temperature; Testing; Thermal resistance;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1980.1070486
