DocumentCode :
1081570
Title :
IIIB-6 high performance bipolar transistors in a CMOS process
Author :
Sullivan, Philip
Volume :
29
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1679
Lastpage :
1680
Keywords :
Bipolar transistors; CMOS process; Circuits; Contact resistance; Implants; Microelectronics; Read-write memory; Silicon; Substrates; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20965
Filename :
1482462
Link To Document :
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