DocumentCode
1081579
Title
IIIB-9 polycrystalline silicon intermediate layers for hermetic seal technology
Author
Barth, P.W. ; Lee, K.F. ; Angell, James B.
Volume
29
Issue
10
fYear
1982
fDate
10/1/1982 12:00:00 AM
Firstpage
1680
Lastpage
1681
Keywords
Bonding processes; Electron devices; Fabrication; Glass; Hermetic seals; Integrated circuit technology; Laboratories; Silicon compounds; Thin film transistors; Wafer bonding;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20966
Filename
1482463
Link To Document