DocumentCode

1081679

Title

IVB-1 GaAs MESFETs with a partially p type drain

Author

Lee, Charlotte P. ; Welch, B.M.

Volume

29

Issue

10

fYear

1982

fDate

10/1/1982 12:00:00 AM

Firstpage

1686

Lastpage

1687

Keywords

Circuits; Contracts; Etching; FETs; Gallium arsenide; Hysteresis; Implants; MESFETs; Optical films; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1982.20976

Filename

1482473