DocumentCode
1081710
Title
Low threshold Be implanted (GaAl)As laser on semi-insulating substrate
Author
Wilt, D. ; Bar-Chaim, N. ; Margalit, S. ; Ury, I. ; Yust, M. ; Yariv, A.
Author_Institution
California Institute of Technology, Pasadena, CA, USA
Volume
16
Issue
4
fYear
1980
fDate
4/1/1980 12:00:00 AM
Firstpage
390
Lastpage
391
Abstract
Be implanted stripe geometry double heterostructure lasers have been fabricated on a semi-insulating GaAs substrate, with threshold currents as low as 15 mA for a cavity length of 100 μm. The laser has been monolithically integrated with a metal-semiconductor field-effect transistor.
Keywords
FET integrated circuits; Gallium materials/lasers; Ion implantation; Schottky-barrier FETs; FETs; Gallium arsenide; Geometrical optics; Integrated optics; Laser theory; Optical device fabrication; Semiconductor lasers; Substrates; Temperature; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1980.1070500
Filename
1070500
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