Title :
Low threshold Be implanted (GaAl)As laser on semi-insulating substrate
Author :
Wilt, D. ; Bar-Chaim, N. ; Margalit, S. ; Ury, I. ; Yust, M. ; Yariv, A.
Author_Institution :
California Institute of Technology, Pasadena, CA, USA
fDate :
4/1/1980 12:00:00 AM
Abstract :
Be implanted stripe geometry double heterostructure lasers have been fabricated on a semi-insulating GaAs substrate, with threshold currents as low as 15 mA for a cavity length of 100 μm. The laser has been monolithically integrated with a metal-semiconductor field-effect transistor.
Keywords :
FET integrated circuits; Gallium materials/lasers; Ion implantation; Schottky-barrier FETs; FETs; Gallium arsenide; Geometrical optics; Integrated optics; Laser theory; Optical device fabrication; Semiconductor lasers; Substrates; Temperature; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1980.1070500
