DocumentCode

1081893

Title

VB-7 the modulation doped GaInAs/AlInAs MESFET

Author

Barnard, J.A. ; Wicks, G. ; Eastman, L.F.

Volume

29

Issue

10

fYear

1982

fDate

10/1/1982 12:00:00 AM

Firstpage

1699

Lastpage

1699

Keywords

Anodes; Cathodes; Diodes; Electron mobility; Epitaxial layers; Gallium arsenide; HEMTs; MESFETs; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1982.20995

Filename

1482492