DocumentCode

1081928

Title

VIA-1 effects of hot-carrier trapping in n- and p-channel MOSFETs

Author

Ng, Kang Kee ; Taylor, Graham W.

Volume

29

Issue

10

fYear

1982

fDate

10/1/1982 12:00:00 AM

Firstpage

1701

Lastpage

1701

Keywords

Degradation; Diodes; Electron devices; Electron traps; Hot carrier effects; Hot carriers; Interface states; MOSFET circuits; Stress; Subthreshold current;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1982.20997

Filename

1482494