Comparison between lasers isolated by oxygen implantation and SiO2isolated stripe lasers

GaAs/GaAlAs DH lasers isolated by an SiO2layer on top of the p-contacting layer are compared to DH lasers in which the isolation is maintained by an isolating the O+ -implanted layer within the n+- substrate. Measurements were performed on four O+ isolated lasers and five SiO2isolated lasers with the same composition and thickness of active and upper confinement layers. Threshold currents of both groups were very similar, whereas the O+ -implanted lasers showed superior thermal resistances by a factor of 2. Thermal resistances were measured by the shift of the lasing spectra with power dissipation.