DocumentCode
1081971
Title
VIA-7 submission for the device research conference march 3, 1982, improved models for predicting the gain of bipolar structures in silicon
Author
Bennett, H.S. ; Lowney, J.R.
Volume
29
Issue
10
fYear
1982
fDate
10/1/1982 12:00:00 AM
Firstpage
1704
Lastpage
1705
Keywords
Charge carrier processes; Electron mobility; Gain measurement; NIST; Photonic band gap; Physics; Predictive models; Radiative recombination; Silicon; Spontaneous emission;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.21001
Filename
1482498
Link To Document