Title :
VIA-9 Auger recombination study in silicon using a tunneling technique
Author :
Krieger, Gerhard ; Swanson, Richard M.
fDate :
10/1/1982 12:00:00 AM
Keywords :
Charge carrier processes; Current measurement; Doping; Electron traps; Heterojunctions; Laboratories; Silicon; Spontaneous emission; Substrate hot electron injection; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.21002
