DocumentCode
1081990
Title
VIA-10 technology and performance of SIPOS heterojunction emitters
Author
Kwark, Young H. ; Swanson, Richard M.
Volume
29
Issue
10
fYear
1982
fDate
10/1/1982 12:00:00 AM
Firstpage
1705
Lastpage
1706
Keywords
Annealing; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Metallization; Numerical analysis; Parasitic capacitance; Passivation; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.21003
Filename
1482500
Link To Document