• DocumentCode
    1081992
  • Title

    Punch-through type InGaAs photodetector fabricated by vapor-phase epitaxy

  • Author

    Susa, Nobuhiko ; Yamauchi, Yoshiharu ; Kanbe, Hiroshi ; Susa, N. ; Yamauchi, Yuji ; Kanbe, H.

  • Author_Institution
    Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
  • Volume
    16
  • Issue
    5
  • fYear
    1980
  • fDate
    5/1/1980 12:00:00 AM
  • Firstpage
    542
  • Lastpage
    545
  • Abstract
    Punch-through type InGaAs/InP photodiodes were made from high purity layers grown on
  • Keywords
    Punchthrough diodes; Dark current; Diodes; Epitaxial growth; Etching; Indium gallium arsenide; Indium phosphide; Low voltage; Photodetectors; Photodiodes; Substrates;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1980.1070525
  • Filename
    1070525
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1081992