DocumentCode
1082001
Title
VIB-1 (Ga,Al)As/GaAs heterojunction bipolar transistors: Design considerations and experimental results
Author
Asbeck, P.M. ; Miller, Douglas L. ; Petersen, W.C. ; Kirkpatrick, C.G.
Volume
29
Issue
10
fYear
1982
fDate
10/1/1982 12:00:00 AM
Firstpage
1706
Lastpage
1707
Keywords
Aluminum; Bipolar transistors; Doping; Epitaxial layers; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Numerical analysis; Parasitic capacitance; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.21004
Filename
1482501
Link To Document