Title :
VIB-1 (Ga,Al)As/GaAs heterojunction bipolar transistors: Design considerations and experimental results
Author :
Asbeck, P.M. ; Miller, Douglas L. ; Petersen, W.C. ; Kirkpatrick, C.G.
fDate :
10/1/1982 12:00:00 AM
Keywords :
Aluminum; Bipolar transistors; Doping; Epitaxial layers; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Numerical analysis; Parasitic capacitance; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.21004
