Title :
Influences of interfacial recombination on oscillation characteristics of InGaAsP/InP DH lasers
Author :
Yano, Mitsuhiro ; Nishi, Hiroshi ; Takusagawa, Masashito
Author_Institution :
Fujitsu Labs., Ltd., Nakahara-ku, Kawasaki, Japan
fDate :
6/1/1980 12:00:00 AM
Abstract :
This paper presents the influences of interfacial recombination on the oscillation characteristics of InGaAsP/InP DH lasers. The effects of interfacial recombination at the two InP-InGaAsP interfaces, and a theoretical study of the oscillation characteristics such as threshold current density and differential quantum efficiency are discussed and compared with experimental results. The effects of interfacial recombination on the temperature dependence of threshold current are also examined.
Keywords :
Charge carrier processes; Gallium materials/lasers; Laser thermal factors; Semiconductor device thermal factors; Carrier confinement; Current density; DH-HEMTs; Indium phosphide; Laser theory; Radiative recombination; Spontaneous emission; Temperature dependence; Threshold current; Velocity measurement;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1980.1070537
